RESEARCH OF PHYSICAL PROCESSES AND DEVELOPMENT OF METHODS FOR RADIATION MODIFICATION PARAMETERS OF SEMICONDUCTOR OPTOELECTRONICS DEVICES
DOI:
https://doi.org/10.17721/2519-481X/2022/74-01Keywords:
solid-state electronics, radiation changes, statistical methods of analysis, photodetectorsAbstract
Operation of solid-state electronics products in the field of ionizing radiation can significantly change their properties, contributing to their premature destruction or loss of technical characteristics necessary for normal operation of the equipment. The changes observed in this case are caused by a number of specific processes discussed above. Distinguish between reversible and irreversible changes.
Irreversible (residual) include radiation changes that remain partially or completely after the termination of exposure. The magnitude of radiation changes is determined by the amount of energy absorbed by materials when interacting with radiation, as well as the rate at which this energy is transferred to them. It depends on the type of radiation and its parameters (energy spectrum, flux density, intensity, etc.), as well as on the nuclear-physical characteristics of materials.
Criteria for the radiation resistance of photodetectors. The criterion for the parametric reliability of photodetectors is formulated on the basis that the object under consideration degrades its parameters gradually, both with an increase in the duration of exposure and the dose of radiation. The purpose of the photodetectors, the imposed restrictions on the criterion of their performance, as well as the physics of the effect of radiation, allow us to consider photodetectors as an object functioning under noise conditions. This allows statistical analysis methods to be applied. With this approach, we can use a well-studied mathematical apparatus for testing statistical hypotheses. Three criteria of radiation resistance of photodetectors are proposed. The first is the signal-to-noise ratio in the interpretation of sufficient statistics, the second is the criterion for the average detection error (Kotelnikov's criterion), and the third is the Bayesian risk criterion. This article examines the physical processes and the development of methods for radiation modification of the parameters of semiconductor optoelectronic devices.
References
1. Vavilov V.S. Effect of radiation on semiconductors / V.S. Vavilov, N.P. Kekelidze, L.S. Smirnov. -
Moscow: Nauka, 1988 .-- 192 p.
2. Lenkov S.V. Physical and technical foundations of radiation technology of semiconductors / S.V.
Lenkov, V.A. Mokritsky, D.A. Peregudov, G.T. Tarielashvili. - Monograph. - Odessa: Astroprint, 2002,297 p.
3. Garkavenko A.S. Radiation modification of the physical properties of wide-gap semiconductors and
the creation of high-power lasers on their basis / Lvov: ZUKTs, 2012. - 258 p.
4. Banzak OV New generation semiconductor detectors for radiation monitoring and dosimetry of
ionizing radiation / O.V. Banzak, O.V. Maslov, V.A. Mokritsky. - Monograph. - Odessa, 2013. - Publishing
house "VMV". - 220 p.
5. Bouchet J.M. PWR primary flow masurements by correlation analysis of nitrogen-16 fluctuations /
J.M. Bouchet, et al. – Progress in Nuclear Energy. – 1982. – Vol. 9.
6. Awadalla S.A. Characterization of detector-grade CdZnTe crystals grown by traveling heater method
(THM) / S.A. Awadalla, J. Mackenzie, H. Chen, eds. // Journal of Crystal Growth. – Vol. 312, issue 4. – 2010.
– 507-513c.
7. Grybos P. Front-end Electronics for Multichannel Semiconductor Detector Systems; EuCARD
Editorial Series on Accelerator Science and Technology, Vol.08 / Institute of Electronic Systems Warsaw
University of Technology . – Warsaw: 2010. – 201 p.
8. Dumitrescu A. Comparison of a digital and an analogical gamma spectrometer at low count rates / A. Dumitrescu // U.P.B. Sci. Bull., Series A. – Vol. 73. – Iss. 4, 2011. – P. 127-138.
9. Maslov O. Passive Computer Gamma- Tomography of Nuclear Fuel / O. Maslov, V. Mokritsky, O. Banzak, // ANIMMA. Third International Conference on Advancements in Nuclear Instrumentation Measurement Methods and their Applications – Marseille, June 23-27, 2013. – Book of Abstracts – Р. 51.
10. Maslov O.V. The Improved CdZnTe Dose Rate Probe / O.V. Maslov, M.V. Maksimov, L.L. Kalnev // 2008 IEEE Nuclear Science Symposium, Medical Imaging Conference and 16th Room Temperature Semiconductor Detector Workshop – Dresden: 19–25 Oct. 2008. – P. 12-87.
11. Maslov O. Multiple energies passive computer tomography of nuclear fuel / O. Maslov // Proceedings of the International Ukrainian-Japanese Conference on Scientific and Industrial Cooperation – Odesa 24 – 25 October 2013. – Р. 114-116.
12. Masuruk K. Dopant incorporation during liquid phase epitaxy / K. Masuruk, T.Bryskewicz // J. Appl. Phys., 1981. – V. 52. – N3. – part 1. – P. 1347–1350.
13. Mokritsky V.А., Maslov O.V., Bansak O.V. Methods and means controls of nuclear materials and state of protective barriers at nuclear power plants // Collection of scientific works of the Military Institute of the Taras Shevchenko National University of Kyiv. - К .: MIKNU, 2019. - № 63. – С. 66 – 72.
14. Mokritskij V.A., Maslov O.V., Banzak O.V. The detector on basis of CdZnTe-gauge for systems radiating-technological control // Collection of scientific works of the Military Institute of the Taras Shevchenko National University of Kyiv. - К .: MIKNU, 2018. - № 58. - С. 68-73.
